产品型号：CY62167DV30LL-55BVXI

CY62167DV30LL-55BVXI
品牌：CYPRESS
批号：
封装：48-VFBGA
数量：21000
价格：
简要描述：SRAM 16 Mb (1 M x 16) 3 V 超低待机和有功功率 48-VFBGA 工业温度
资料下载：
 CY62167DV30LL-55BVXI 在线询价
详细描述

CYPRESS  

SRAM 16 Mb (1 M x 16) 3 V 超低待机和有功功率 48-VFBGA 工业温度

制造商零件编号: CY62167DV30LL-55BVXI
安装方法:  SurfaceMount 
封装形式：  VFBGA-48 
包装：  TRAY
标准包装数量:  210

产品亮点

  • Memory Density: 16 Mb
  • Memory Organization: 1M x 16
  • Supply Voltage-Nom: 3 V
  • Access Time-Max: 55 ns
  • Temperature Grade: Industrial
 

Cypress's More Battery Life™ (MoBL®) SRAMs dominate the low-power SRAM market with the industry's widest portfolio, starting from low (64 Kb) to very high densities (extending up to 64 Mb) with standard voltage (nominal) and bus-width options, at the cutting edge of process technology.

Cypress More Battery Life™ (MoBL®) SRAMs offer best-in-class access times (45 ns) with the industry's lowest Standby Power Dissipation (Maximum), making them the ideal high-performance, high-battery life memory solutions for mobile phones, PDAs, Point of Sale (POS) terminals, handheld radio-sets/gaming machines, Automotive Audio, ECU, Navigation and Telematics Systems.

Cypress More Battery Life™ (MoBL®) can be designed-in with a battery and a memory controller, to be used as Super-Fast Non-Volatile-SRAM for security circuitry, with a non-volatile memory life of 7 to 9 years.

The Micropower SRAMs are offered in industry standard packaging options (RoHS-compliant), in Industrial and Automotive Temperature Range.

The CY62167DV30LL-55BVXI is an Ultra Low Power 16 Meg SRAM organized as 1Meg by 16 bits with a speed of 55ns, available in a 48-ball Fine Pitch Ball Grid Array package and has industrial temperature specifications.
www.huazhu.net
相关图片：
相关库存：
型号 厂商 封装 批号 数量 简要描述 图片 资料
CY62158ELL-45ZSXI CYPRESS 11+ TSOP-44 135 CY62158E 系列 8 Mb (1 M x 8) 4.5 - 5.5 V 45 ns 静态 RAM - TSOP-44
CY62136FV30LL-45ZSXI CYPRESS 11+ TSOP-44 270 CY62136FV30 系列 2 Mb (128 K x 16) 2.2 - 3.6 V 45 ns 静态RAM - TSOP-44
CY62168DV30LL-55BVI CYPRESS 11+ VFBGA-36 210 CY62168DV30 系列 16 Mb (2 M x 8) 2.2 - 3.6 V 55 ns 静态RAM - VFBGA-36
CY62126EV30LL-45ZSXI CYPRESS 11+ TSOP-44 135 SRAM 1 Mb (64 K x 16) 3 V 超低待机和有功功率 44-TSOP II 工业温度
CY62256NLL-55ZXI CYPRESS 11+ TSOP-28 234 CY62256N Series 256-kbit (32 K x 8) 5 V 55 ns Static RAM - TSOP-28
CY62167EV30LL-45ZXI CYPRESS 11+ TSOP-48 96 CY62167EV30 系列 16 Mb (1 M x 16/2 M x 8) 2.2 - 3.6 V 45 ns 静态 RAM TSOP-48
CY62147EV30LL-45BVXI CYPRESS 11+ FBGA-48 480 CY62147EV30 系列 4 Mb (256Kx16) 2.2 V 45 ns CMOS 静态RAM - FBGA-48
CY62167DV30LL-55BVI CYPRESS 11+ VFBGA-48 210 CY62167DV30 系列 16 Mb (1 M x 16) 2.2 - 3.6 V 55 ns 静态RAM - VFBGA-48
CY62158EV30LL-45BVXI CYPRESS 11+ VFBGA-48 480 CY62158EV30 系列 8 Mb (1024 K x 8) 2.2 - 3.6 V 45 ns 静态RAM - VFBGA-48
CY62148EV30LL-55SXI CYPRESS 11+ SOIC-32 25 CY62148EV30 系列 4 Mb (512 K × 8) 表面贴装 静态 RAM - SOIC-32